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2SK3868
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (p -MOSVI)
2SK3868
Switching Regulator Applications
* * * * Low drain-source ON resistance: R DS (ON) = 1.3 (typ.) High forward transfer admittance: |Yfs| = 3S (typ.) Low leakage current: IDSS = 100 E (V DS = 500 V) A Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage DC Drain current (Note 1) Symbol V DSS V DGR V GSS ID IDP PD EA S IAR EAR Tch Tstg Pulse (t = 1 ms) (Note 1) Rating 500 500 30 5 A 20 35 180 5 3.5 150 -55~150 W mJ A mJ C C
1: Gate 2: Drain 3: Source
Unit V V V
Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range
JEDEC JEITA TOSHIBA
? SC-67 2-10U1B
Weight : 1.7 g (typ.)
Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.57 62.5 Unit 2 C/W C/W
Note 1: Please use devices on conditions that the channel temperature is below 150C. Note 2: VDD = 90 V, Tch = 25C(initial), L = 12.2 mH, IAR = 5 A, R G = 25 Note 3: Repetitive rating: Pulse width limited by maximum channel temperature This transistor is an electrostatic sensitive device. Please handle with caution.
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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Gate-source breakdown voltage Drain cut-off current Drain-source breakdow n voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge Gate-source charge Gate-drain charge tf toff Qg Qgs Qgd V DD 400 V, V GS = 10 V, ID = 5 A - V DD 225 V - Duty < 1%, tw = 10 s = Symbol IGSS V (BR) GSS IDSS V (BR) DSS V th RDS (ON) Yf s Ciss Crss Coss tr ton 10 V V GS 0V 15 ID = 2.5 A V OUT RL = 90 V DS = 25 V, V GS = 0 V, f = 1 MHz Test Condition V GS = 25 V, V DS = 0 V IG = 10 A, V DS = 0 V V DS = 500 V, V GS = 0 V ID = 10 mA, V GS = 0 V V DS = 10 V, ID = 1 mA V GS = 10 V, ID = 2.5 A V DS = 10 V, ID = 2.5 A Min 30 500 2.0 1.5 Typ. 1.3 3.0 550 7 70 10 20 10 50 16 10 6 Max 10 100 4.0 1.7 pF Unit A V A V V S

ns

nC
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP V DSF trr Qrr Test Condition IDR = 5 A, V GS = 0 V IDR = 5 A, V GS = 0 V, dIDR /dt = 100 A/s Min Typ. 150 0.3 Max 5 20 -1.7 Unit A A V ns C
Marking
K3868
Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.
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2SK3868
ID - V DS
5 COMMON SOURCE Tc = 25C PULSE TEST 6 10 10 5.5 COMMON SOURCE Tc = 25C PULSE TEST 8
ID - V DS
10
DRAIN CURRENT ID (A)
DRAIN CURRENT ID (A)
4
6
5.25
3
5
6 5.5 4 5.25 5 2 4.75 4.5 VGS = 4 V 4 8 12 16 20 24
2
4.75 4.5
1 VGS = 4 V 0 0
2
4
6
8
10
12
0 0
DRAIN-SOURCE VOLTAGE VDS
(V)
DRAIN-SOURCE VOLTAGE VDS
(V)
ID - V GS DRAIN-SOURCE VOLTAGE V DS (V)
10 COMMON SOURCE 20
V DS - V GS
COMMON SOURCE Tc = 25*Z 16 PULSE TEST
DRAIN CURRENT ID (A)
8
VDS = 20 V PULSE TEST 25
6 Tc = -55C 4 100
12
8
ID = 5 A
2
4
2.5 1.2
0 0
2
4
6
8
10
0 0
4
8
12
16
20
GATE-SOURCE VOLTAGE VGS
(V)
GATE-SOURCE VOLTAGE VGS
(V)
Yf s - ID FORWARD TRANSFER ADMITTANCE Yfs (S)
10 VDS = 20 V PULSE TEST Tc = -55C 100 10
RDS (ON) - ID DRAIN-SOURCE ON RESISTANCE RDS (ON) (m)
COMMON SOURCE Tc = 25C PULSE TEST
COMMON SOURCE
VGS = 10 V15V 1
1
25
0.1 0.1
1
10
0.1 0.01
0.1
1
10
DRAIN CURRENT D (A) I
DRAIN CURRENT D (A) I
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RDS (ON) - Tc
5 10
IDR - V DS DRAIN REVERSE CURRENT ID R (A)
COMMON SOURCE 5 3 Tc = 25C PULSE TEST
DRAIN-SOURCE ON RESISTANCE RDS (ON) (m )
COMMON SOURCE 4 VGS = 10 V PULSE TEST
3
ID = 5A 2.5
1
2 1.2 1
0.5 0.3
10 3 VGS = 0, -1,1 V
0 0
40
80
120
160
0.1 0
-0.4
-0.8
-1.2
-1.6
-2.0
CASE TEMPERATURE Tc ( C)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE - V DS
10000 5
V th - T c
COMMON SOURCE VDS = 10 V 4 ID = 1 mA PULSE TEST 3
1000
Ciss
100
Coss
GATE THRESHOLD VOLTAGE Vth (V)
CAPACITANCE C (pF)
2
10 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 1 0.1 1 3 5 10
Crss
1
30 50
100
0 -80
-40
0
40
80
120
160
DRAIN-SOURCE VOLTAGE VDS (V)
CASE TEMPERATURE Tc ( C)
PD - Tc DRAIN-SOURCE VOLTAGE VDS (V)
50 500
DYNAMIC INPUT / OUTPUT CHARACTERISTICS GATE-SOURCE VOLTAGE V GS (V)
20
DRAIN POWER DISSIPATION PD (W)
40
400
VDS
16
30
300
VDD = 100 V
400
12
20
200 200 COMMON SOURCE 100 VGS ID = 5 A Tc = 25C PULSE TEST 0 0 5 10 15 20 0 25 4 8
10
0 0
40
80
120
160
200
CASE TEMPERATURE Tc (C)
TOTAL GATE CHARGE Q (nC) g
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r th - tw NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)
10
1
Duty=0.5 0.2
0.1
0.1 0.05 0.02 SINGLE PULSE 0.01 PDM t T Duty = t/T Rth (ch-c) = 3.57C/W
0.01
0.001 10E
100E
1*
10*
100*
1
10
PULSE WIDTH tw (s)
SAFE OPERATING AREA
100 200
EA S - Tch
ID max ( PULSED) * 10 ID max ( CONTINUOUS) * 1 ms * DC OPERATION Tc = 25C 100 s *
DRAIN CURRENT ID (A)
AVALANCHE ENERGY EAS (mJ)
160
120
1
80
40
*|SINGLE NONREPETITIVE
0.1
PULSE Tc=25*Z CURVES MUST BE DERATED LINEARLY WITH INCREASE IN
0 25
50
75
100
125
150
0.01 1
TEMPERATURE.
VDSS max 10 100 1000
CHANNEL TEMPERATURE (INITIAL) Tch (C) BVDSS IAR V DD TEST CIRCUIT RG = 25 V DD = 90 V, L = 12.2mH V DS
DRAIN-SOURCE VOLTAGE VDS (V)
15 V -15 V
WAVE FORM
? AS = 1 2 BVDSS L I2 B VDSS - VDD
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RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
030619EAA
* The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, indus trial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.
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